| Autor: |
Edgardo Saucedo, Omar S. Martinez, Osvaldo Vigil-Galán, I. Benito, Carmen M. Ruiz, Ernesto Diéguez, L. Fornaro, N.V. Sochinskii |
| Rok vydání: |
2006 |
| Předmět: |
|
| Zdroj: |
Journal of Crystal Growth. 291:416-423 |
| ISSN: |
0022-0248 |
| DOI: |
10.1016/j.jcrysgro.2006.03.049 |
| Popis: |
CdTe:Bi crystals were grown by the vertical Bridgman method, varying the nominal Bi-dopant concentration in the range of 1×10 17 –1×10 19 at/cm 3 . Bi and Bi 1.8−2.3 Te precipitates are the most characteristic structural defects in these crystals. Raman spectroscopy studies have shown that Bi traps Te from the CdTe host lattice. Low-temperature photoluminescence in the 1.2–1.6 eV energy region is presented. Several new emissions related to the incorporation of Bi are observed. Semi-insulating CdTe was obtained ( ρ =2×10 10 Ω cm) for dopant concentration of the order of 1×10 17 at/cm 3 . The resisitivity decreased to values as lower as 1×10 5 Ω cm for higher concentrations. Photosensitivity studies show an evolution from typical conductivity to shallow acceptor defects-related conduction when the Bi concentration is increased. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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