Large enhancement of the photocurrent density in N-doped Cu3N films through bandgap reduction
| Autor: | Sehun Seo, Sangwoo Ryu, Sang Yun Jeong, Hyo Jin Hong, Bong-Joong Kim, Jaesun Song, Heesung Noh, Sanghan Lee, Jongmin Lee, Hyunji An |
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| Rok vydání: | 2020 |
| Předmět: |
Photocurrent
Materials science business.industry Band gap Doping chemistry.chemical_element 02 engineering and technology Nitride 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Copper 0104 chemical sciences Transition metal chemistry Sputtering Ceramics and Composites Optoelectronics Homojunction 0210 nano-technology business |
| Zdroj: | Journal of the Korean Ceramic Society. 57:345-351 |
| ISSN: | 2234-0491 1229-7801 |
| Popis: | Copper nitride (Cu3N) has attracted wide attention for solar energy conversion applications owing to suitable Eg of 1.6–1.9 eV, non-toxicity, and possibility to fabricate homojunction solar cells. The Cu3N has a body-centered site of anti-ReO3 structure, which can be easily occupied by transition metals. Hence, many studies on the band gap tuning of Cu3N have been conducted with doping of various elements. However, N-doped Cu3N film has not been reported experimentally yet although it was theoretically predicted to have very stable doping and new partially filled narrow band gap. Herein, via systematically controlling the nitrogen partial pressure (R = N2/N2 + Ar), we successfully fabricated N-doped Cu3N film using reactive RF sputtering. The N-doped Cu3N film (only specific R = 0.5) exhibits significantly reduced optical bandgap (1.1 eV) and improved photocurrent density (1.66 mA/cm2 at 10 V) compared with that of pristine Cu3N film. |
| Databáze: | OpenAIRE |
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