Epitaxial n+-Ge/p+-Si(001) Heterostructures With Ultra Sharp Doping Profiles for Light Emitting Diode Applications

Autor:	Anastasiya Mikhailovna Titova, Vladimir Gennadievich Shengurov, Dmitrii Filatov, Sergey Alexandrovich Denisov, Vadim Yurievich Chalkov, Mikhail V. Ved, Andrey Zaitzev, Artem Alexandrovich Sushkov, Natalia Alekseevna Alyabina
Rok vydání:	2022
Zdroj:	SSRN Electronic Journal.
ISSN:	1556-5068
DOI:	10.2139/ssrn.4210206
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e598a9fd9aac992db2dd4928e09e06a9 https://doi.org/10.2139/ssrn.4210206 Zobrazit plný text záznamu