Band gap engineering to stimulate the optoelectronic performance of lead-free halide perovskites RbGeX3 (X = Cl, Br) under pressure

Autor:	S. K. Mitro, Md Saiduzzaman, Tariqul Islam Asif, Khandaker Monower Hossain
Rok vydání:	2022
Předmět:	Electrical and Electronic Engineering Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials
Zdroj:	Journal of Materials Science: Materials in Electronics. 33:13860-13875
ISSN:	1573-482X 0957-4522
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e58d5585261ec51a80cfa5096bf48fba https://doi.org/10.1007/s10854-022-08318-2 Zobrazit plný text záznamu Full text from SpringerLink