Single crystal aluminum lines with excellent endurance against stress induced failure

Autor:	Hisashi Kaneko, Masami Miyauchi, Atsuhito Sawabe, Takashi Kawanoue, Yoshiko Kohanawa, Masahiko Hasunuma, Shuichi Komatsu
Rok vydání:	2003
Předmět:	Materials science chemistry Aluminium Stress induced Crystal orientation Electronic engineering chemistry.chemical_element Potential candidate Crystallite Composite material Electromigration Single crystal Surface energy
Zdroj:	International Technical Digest on Electron Devices Meeting.
DOI:	10.1109/iedm.1989.74370
Popis:	An excellent ability to withstand stress-induced failure and electromigration failure is demonstrated for single-crystal Al lines. In both single-crystal and polycrystalline Al lines, voids were surrounded by low surface energy planes, so that the shape of the voids would be affected by crystal orientation. The results suggest that single-crystal Al is a potential candidate for submicron lines in ULSIs. >
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e58d45460971c6bd2d9baab65dbeb490 https://doi.org/10.1109/iedm.1989.74370 Zobrazit plný text záznamu