Optimizing Conditions for Formation of Local Zones for Thermomigration in Silicon
| Autor: | B.M. Seredin, V.P. Popov, A.N. Zaichenko |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Silicon Metallurgy chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics chemistry Aluminium 0103 physical sciences General Materials Science Wetting 0210 nano-technology Dissolution |
| Zdroj: | Solid State Phenomena. 265:839-844 |
| ISSN: | 1662-9779 |
| DOI: | 10.4028/www.scientific.net/ssp.265.839 |
| Popis: | The types of defects occurring during the formation of local zones on the surface of silicon wafers have been established. The dependences of defect formation on the surface from the surface microrelief, thickness of the protective coating of silicon oxide, process temperature, flow rate of the melt, the height of the melt, and the concentration of gallium additives in the aluminum have been determined. The optimum conditions of the process of zones formation have been revealed, and the total relative number of all types of defects has been significantly reduced. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|