High quality crack-free GaN film grown on si (1 1 1) substrate without AlN interlayer
| Autor: | Miao He, Chao Liu, Jun Zhang, Kai Li, Xiang-Jing Zhuo, Shuti Li, Dan-Wei Li, Lei Yu, Jia-Sheng Diao, Yuan-Wen Zhang, Bijun Zhao, Xingfu Wang |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
Scanning electron microscope Nanotechnology Chemical vapor deposition Substrate (electronics) Nitride Condensed Matter Physics Inorganic Chemistry symbols.namesake Cracking Materials Chemistry symbols Metalorganic vapour phase epitaxy Composite material Raman spectroscopy Layer (electronics) |
| Zdroj: | Journal of Crystal Growth. 407:58-62 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2014.08.025 |
| Popis: | High quality crack-free GaN film has been grown on 2 in. n-type Si (1 1 1) substrate without AlN interlayers by metalorganic chemical vapor deposition (MOCVD). By using a two-step-pressure growth technique for the AlN buffer layer, we have obtained crack-free 1.8 μm thick continuous GaN layer. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) results indicate that the two-step-pressure growth method can improve the crystalline quality of the GaN film by prolonging the three-dimensional (3D) growth process of the GaN layer, Raman spectrum analysis shows that tensile stress in the overlaying GaN layer can be reduced obviously to 0.62 GPa, which helps to reduce the possibility of cracking. |
| Databáze: | OpenAIRE |
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