Determination of band offsets and subband levels for a GaInP/AlGaInP quantum well by photoreflectance using a InGaP laser diode

Autor:	Akihiro Tomioka, Takahiro Igawa, Shinichi Kakuda, Takeshi Inada, Wataru Susaki
Rok vydání:	2009
Předmět:	Laser diode business.industry Chemistry Condensed Matter Physics Laser Spectral line law.invention Schrödinger equation symbols.namesake law symbols Optoelectronics Quantum well laser Double quantum business Conduction band Quantum well
Zdroj:	physica status solidi c. 6:1517-1519
ISSN:	1610-1642 1862-6351
DOI:	10.1002/pssc.200881540
Popis:	The band offsets and subband levels in a double quantum well layer for a 660nm-Ga0.4In0.6P/(Al0.5Ga0.5)0.5In0.5P quantum well laser are determined by photoreflectance using a 410 nm InGaN laser with current modulation at room temperature. The subband levels are analyzed by numerical calculation of the Schrodinger equation for the layer structure by varying the conduction band offset and compared with the measured photoreflectance spectra. The conduction band offset ratio is determined to be 0.5+0.03. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
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