Si-Substrate Removal for AlGaN/GaN Devices on PCB Carriers
| Autor: | Patrick Waltereit, Beatrix Weiss, Oliver Ambacher, Michael Dammann, Richard Reiner, Thomas Gerrer, Matthias Sinnwell, Stefan Moench, Dirk Meder, Rudiger Quay |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Capacitive coupling Materials science business.industry 020208 electrical & electronic engineering 02 engineering and technology Trapping Substrate (electronics) 01 natural sciences Isotropic etching Capacitance Thermally conductive pad 0103 physical sciences Thermal 0202 electrical engineering electronic engineering information engineering Optoelectronics business Voltage |
| Zdroj: | 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD). |
| DOI: | 10.1109/ispsd46842.2020.9170078 |
| Popis: | This work presents a Si-substrate removal technique for AlGaN/GaN devices on PCB carriers. The Si-removal method is explained and experimentally applied to PCB-embedded AlGaN/GaN-on-Si devices. The PCB-embedding package is reopened at the thermal pad by laser-removal and the Si-substrate is removed by wet chemical etching. The paper presents a direct comparison of the electrical characteristics for devices before and after Si-removal. Different substrate related effects are observed and investigated. The pulsed drain currents degrade after Si-removal, due to the absence of the thermal substrate capacitance. Furthermore, the dynamic on-state resistance is increased by surface trapping on the exposed backside. Measurement results are discussed and physically interpreted. The on-state resistance is unaffected in the range of $175 \mathrm{m}\Omega$ before and after Si-removal. The measurements show an increase of the off-state voltage from 600 V to 1400 V for devices after Si-removal. |
| Databáze: | OpenAIRE |
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