| Autor: |
H. Buhay, E. Stepke, M. H. Francombe, W. H. Kasner, Donald R. Lampe, S. Sinharoy |
| Rok vydání: |
2002 |
| Předmět: |
|
| Zdroj: |
[Proceedings] 1990 IEEE 7th International Symposium on Applications of Ferroelectrics. |
| DOI: |
10.1109/isaf.1990.200213 |
| Popis: |
Stoichiometric bismuth titanate films were prepared on MgO, Si, and Pt-coated Si by the technique of pulsed excimer laser deposition. This technique is a high-energy process with the potential to form the ferroelectric phase at a lower temperature than by sputtering. Fiber textured films were obtained on MgO [110] with preferred c-axis orientation. Polycrystalline films were obtained on Si [100] and Pt-coated Si at a temperature as low as 500 degrees C. The estimated saturation polarization and coercive field measured for the films were 28.0 mu C/cm/sup 2/ and 200 kV/cm, respectively. Also important from an integrated silicon device point of view, the as-deposited films had few particulates and were crack-free without the need for a postdeposition anneal. Results of attempts to integrate the films prepared in this manner in a FET memory structure are outlined. > |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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