Transport properties of carriers through nanocrystalline Lu3N@C80/Au interface

Autor:	Yong Sun, Fumio Morimoto, Masamichi Sakaino, Kenta Kirimoto
Rok vydání:	2014
Předmět:	Materials science business.industry Schottky barrier General Engineering General Physics and Astronomy Nanotechnology Space charge Nanocrystalline material Depletion region Phase (matter) Electron affinity Optoelectronics business HOMO/LUMO Electrical impedance
Zdroj:	Japanese Journal of Applied Physics. 53:035102
ISSN:	1347-4065 0021-4922
DOI:	10.7567/jjap.53.035102
Popis:	The transport property of carriers passing through a nanocrystalline Lu3N@C80/Au interface has been studied by measuring impedance under various alternating voltages and DC biases. A depletion layer thicker than 110 µm is recognized in the Lu3N@C80/Au Schottky contact. Such a thick depletion layer indicates that the formation of space charge in the nanocrystalline Lu3N@C80 phase is difficult owing to an increase in LUMO energy, i.e., a decrease in the electron affinity of the Lu3N@C80 molecule. A high interfacial resistance is found to increase the transmission time of the carriers passing through the Lu3N@C80/Au Schottky contact. Such a high interfacial resistance may be ascribed to the low mobility of the carriers in the nanocrystalline Lu3N@C80 phase.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e55b8cafae3dfc3e8df6e9761b9f9342 https://doi.org/10.7567/jjap.53.035102 Zobrazit plný text záznamu