Single-wafer polysilicon engineering for the improvement of over erase in a 0.18-μm floating-gate flash memory
| Autor: | Cheng-Chen Hsueh, S. Pan, Hsueh-Hao Shih, Yaw-Lin Hwang, Kuang-Chao Chen, Yun-Chi Yang, Chih-Yuan Lu, H. Chung, Tzung-Ting Han, Tuung Luoh |
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| Rok vydání: | 2003 |
| Předmět: |
Materials science
Silicon business.industry Polysilicon depletion effect Electrical engineering chemistry.chemical_element Integrated circuit Chemical vapor deposition Condensed Matter Physics Industrial and Manufacturing Engineering Grain size Flash memory Electronic Optical and Magnetic Materials law.invention chemistry law Hardware_INTEGRATEDCIRCUITS Optoelectronics Wafer Electrical and Electronic Engineering Thin film business |
| Zdroj: | IEEE Transactions on Semiconductor Manufacturing. 16:155-164 |
| ISSN: | 0894-6507 |
| DOI: | 10.1109/tsm.2003.810937 |
| Popis: | A new polysilicon grain engineering technology for the improvement of over erase in 0.18-/spl mu/m floating-gate flash memory has been developed with the use of single-wafer polysilicon processing, which makes it practical to use hydrogen as a process variable. The addition of hydrogen in polysilicon deposition significantly alters the reaction kinetics and produces polysilicon thin film of smooth surface, fine and uniformly distributed grains. Such a micrograin polysilicon possesses show excellent high-temperature stability. The benefits of the micrograin polysilicon are to be demonstrated through its improvement in over erase of a 0.18-/spl mu/m floating-gate flash memory. |
| Databáze: | OpenAIRE |
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