Pairs of Si atomic lines self-assembling on the β-SiC(100) surface: an 8×2 reconstruction
| Autor: | V. Yu. Aristov, L. Douillard, Patrick Soukiassian, F Semond |
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| Rok vydání: | 1998 |
| Předmět: |
Surface (mathematics)
Materials science Silicon Superlattice chemistry.chemical_element Surfaces and Interfaces Condensed Matter Physics Molecular physics Surfaces Coatings and Films law.invention chemistry.chemical_compound Crystallography chemistry law Self assembling Materials Chemistry Silicon carbide Self-assembly Scanning tunneling microscope Surface reconstruction |
| Zdroj: | Surface Science. 401:L395-L400 |
| ISSN: | 0039-6028 |
| DOI: | 10.1016/s0039-6028(98)00077-6 |
| Popis: | We investigate the transition between β -SiC(100) surface reconstructions using scanning tunneling microscopy (filled and empty electronic states). We find the unexpected formation of Si-dimer lines that are self-assembled by pairs with a long-range order resulting in an even 8×2 surface reconstruction. This very uncommon surface ordering results in the combination of alternating periodic 3×2 and 5×2 unit cells. In contrast to the β -SiC(100)3×2 surface reconstruction, the Si-dimers are symmetric. Such atomic line pairs provide a novel type of one dimensional sub-nanostructure potentially having interesting characteristics. |
| Databáze: | OpenAIRE |
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