Observation of Transformation from Quantum Shuttle to Single-Electron Tunnel in Nanopillar Transistor
| Autor: | Che-Min Yang, Hsiang-Chen Hsu, Yue-Min Wan, Yi-Feng Chen, Shiao-Yu Chen, Chih-An Chen |
|---|---|
| Rok vydání: | 2009 |
| Předmět: |
Materials science
Silicon Condensed matter physics Transistor Coulomb blockade chemistry.chemical_element Bioengineering Surfaces and Interfaces Electron Condensed Matter Physics Surfaces Coatings and Films law.invention Vibration chemistry.chemical_compound Silicon nitride chemistry Mechanics of Materials law Energy level Biotechnology Nanopillar |
| Zdroj: | e-Journal of Surface Science and Nanotechnology. 7:518-520 |
| ISSN: | 1348-0391 |
| Popis: | We reports observation of giant switching currents in nanopillar transistors at 300 K. It is found that these signals represent mechanical vibration due to the interaction of charging electron and the elastic materials of silicon and silicon nitride. Specifically, when an electron is charged to penetrate the SiNx/Si/SiNx multilayer, an electrical force will be initiated to make it vibrate. In addition, such motion will couple to the electronic state in the central Si island for the optimal exchange of elastic and quantum energy. As a consequence, in some mechanical modes, these coupled vibrations will make the transistor functioning like a self-coordinated switching pump for persistent tunnel of electrical current. [DOI: 10.1380/ejssnt.2009.518] |
| Databáze: | OpenAIRE |
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