Evaluating the Drift-Region Length Effect of nLDMOS on ESD Ability with a TLP Testing System
| Autor: | Sheng-Kai Fan, Shen-Li Chen, Pei-Lin Wu, Yu-Lin Jhou, Po-Lin Lin |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
LDMOS business.industry Computer science 020208 electrical & electronic engineering Length effect 02 engineering and technology 01 natural sciences 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Optoelectronics Breakdown voltage business Voltage |
| Zdroj: | GCCE |
| DOI: | 10.1109/gcce46687.2019.9015277 |
| Popis: | In this work, the effect of different drift region lengths on the ESD ability in ultra-high voltage LDMOS is proposed and verified via a 0.5 μm 300 V process. By the different drift-region lengths, the corresponding breakdown voltage can result in the corresponding trigger voltage, holding voltage and secondary breakdown current. As the drift-region length decreases, V t1 and V h values will decrease both too. Eventually, as the drift-region length is 5.8 μm, the optimized secondary breakdown current can be upgraded to 6.842 A. The overall DUTs has higher ESD ability than that of the reference group. |
| Databáze: | OpenAIRE |
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