Low temperature fabrication of high-performance VO2 film via embedding low vanadium buffer layer
| Autor: | Yadong Jiang, Jinhong Dai, Zihao Xiang, Wen Xu, Zhiming Wu, Zhangying Huang, Yuanlin Shi, Chunhui Ji, Jun Wang, Xiang Dong |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Phase transition
Fabrication Materials science Annealing (metallurgy) business.industry Transition temperature General Physics and Astronomy Vanadium chemistry.chemical_element 02 engineering and technology Surfaces and Interfaces General Chemistry Sputter deposition 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Vanadium oxide 0104 chemical sciences Surfaces Coatings and Films chemistry Electrical resistivity and conductivity Optoelectronics 0210 nano-technology business |
| Zdroj: | Applied Surface Science. 517:146101 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2020.146101 |
| Popis: | Vanadium dioxide (VO2), which can initiate an automatic reversible metal-to-insulator transition (MIT) from tetragonal to monoclinic structure at the transition temperature (Tc) of 68 °C, is a promising candidate to realize electronic devices due to its dramatic changes in electrical resistivity through MIT. Moreover, the application of VO2 on modulation devices requires a narrow hysteresis width associated with a significant change in its electronic properties, which is quite challenging in VO2 films fabricated by magnetron sputtering, besides, the high preparation temperature around 400 °C also hinders the further industrial production of VO2 films. In this paper, by adding a simple and easy-to-obtain low-valence vanadium buffer layer between the substrate and the VO2 layer, high performance VO2 films with electrical phase transition close to four orders of magnitude and loop width less than 5 °C are obtained. Meanwhile, the annealing temperature of the fabricating process is decreased to only 320 °C, which is 80 °C lower than the ordinary preparation temperature and significantly reducing energy consumption and manufacturing difficulty. Such enhanced performance will benefit the publicity and application for VO2-based modulation devices. |
| Databáze: | OpenAIRE |
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