Influence of Nucleation Layers on MOVPE Growth of Semipolar ($$11{\bar{2}}2$$) GaN on m-Plane Sapphire
| Autor: | Arnab Bhattacharya, Nirupam Hatui, Priti Gupta, Jayesh B. Parmar, Carina B. Maliakkal, Bhagyashree A. Chalke, A. Azizur Rahman |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science Photoluminescence Nucleation Analytical chemistry 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Electronic Optical and Magnetic Materials Crystal Full width at half maximum 0103 physical sciences Materials Chemistry Sapphire Metalorganic vapour phase epitaxy Electrical and Electronic Engineering 0210 nano-technology Bar (unit) |
| Zdroj: | Journal of Electronic Materials. 50:4533-4539 |
| ISSN: | 1543-186X 0361-5235 |
| Popis: | The influence of the underlying nucleation layer on the properties of semipolar $$(11{\bar{2}}2)$$ GaN grown on m-plane sapphire by metalorganic vapor-phase epitaxy has been investigated. $$(11{\bar{2}}2)$$ GaN epilayers of ~ 1 μm thickness were grown using four different initiating sequences: low-temperature AlN and GaN, and high-temperature AlN buffer layers, and directly (high-temperature GaN). The choice of nucleation layer had a pronounced effect on the surface morphology and crystal quality of the overlying GaN epilayer. In comparison, direct growth of $$(11{\bar{2}}2)$$ GaN without any buffer layer provided the best crystal quality with a rocking-curve $$\omega $$ full-width at half-maximum (FWHM) value of 720 arcsec along the $$[11{\bar{2}}{\bar{3}}]$$ direction and relatively enhanced near-band-edge photoluminescence emission, thus showing this direct growth process to be a simple route for synthesis of semipolar $$(11{\bar{2}}2)$$ GaN layers. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink