Multiple-input bulk-driven quasi-floating-gate MOS transistor for low-voltage low-power integrated circuits
| Autor: | Fabian Khateb, Winai Jaikla, Tomasz Kulej, Harikrishna Veldandi |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Computer science
business.industry Transistor Electrical engineering 020206 networking & telecommunications 02 engineering and technology Integrated circuit Chip law.invention Power (physics) 03 medical and health sciences 0302 clinical medicine CMOS law Current conveyor Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Common-mode signal Hardware_ARITHMETICANDLOGICSTRUCTURES Electrical and Electronic Engineering business Low voltage 030217 neurology & neurosurgery |
| Zdroj: | AEU - International Journal of Electronics and Communications. 100:32-38 |
| ISSN: | 1434-8411 |
| Popis: | This brief presents the first experimental results of the multiple-input bulk-driven quasi-floating-gate (MI-BD-QFG) MOS transistor (MOST) which is suitable for low-voltage (LV) low-power (LP) integrated circuits design. The MI-BD-QFG MOST is an extension to the principle of the bulk-driven quasi-floating-gate (BD-QFG) MOST. However, unlike the BD-QFG the MI-BD-QFG MOST offers multiple-input that simplifies specific CMOS topologies and reduce their power consumption. To confirm the advantages of the MI-BD-QFG MOST a Differential Difference Current Conveyor (DDCC) with very simple CMOS structure has been designed and fabricated in a standard n-well 0.18 µm CMOS process from TSMC with total chip area 350 µm × 78 µm. The fabricated circuit uses a 0.5 V power supply, consumes 1.7 µW power and offers near rail-to-rail input common mode range. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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