| Autor: |
C. R. Miskys, Oliver Ambacher, Martin Stutzmann, Michael K. Kelly |
| Rok vydání: |
2003 |
| Předmět: |
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| Zdroj: |
physica status solidi (c). :1627-1650 |
| ISSN: |
1610-1634 |
| DOI: |
10.1002/pssc.200303140 |
| Popis: |
Various physical aspects and potential applications of the laser-induced separation of GaN epilayers from their sapphire substrate are reviewed. The effect of short laser pulses on the thermal decomposition of GaN and possible applications of the laser-induced dissociation of GaN for fast etching of this material is discussed. Particular emphasis is placed on the defect-free delamination of large area GaN films with thicknesses ranging from 3 to 300 μm from sapphire substrates. The use of the resulting freestanding GaN films in device technology and homoepitaxy of III-nitrides are outlined. Specific examples are the flip-chip bonding of freestanding InGaN/GaN LEDs to a silicon submount and the production of pseudosubstrates for the homoepitaxy of high quality GaN epilayers. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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