InGaAs quantum dots formed in tetrahedral-shaped recesses on GaAs (111)B grown by metalorganic chemical vapor deposition
| Autor: | Kazuhito Uchida, Masashi Shima, Takashi Sekiguchi, Yoshiro Sugiyama, Noboru Miura, Naoki Yokoyama, Yoshiki Sakuma, Toshiro Futatsugi, Yuji Awano |
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| Rok vydání: | 1999 |
| Předmět: |
Fabrication
Materials science Solid-state physics Electronic memory business.industry Nanotechnology Substrate (electronics) Chemical vapor deposition Condensed Matter Physics Electronic Optical and Magnetic Materials Semiconductor quantum dots Quantum dot Materials Chemistry Tetrahedron Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | Journal of Electronic Materials. 28:466-480 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-999-0097-8 |
| Popis: | Novel semiconductor quantum dots (QDs), grown in tetrahedral-shaped recesses (TSRs) formed on a (111)B GaAs substrate, are described from both material science and device application points of view. After explaining the fabrication procedure for TSRs, growth of InGaAs QDs and their optical properties are explained. It is revealed that an InGaAs QD of indium-rich chemical composition is formed spontaneously at the bottom of each TSR. The mechanism of the QD formation is discussed in detail. It is proved from magneto-photoluminescence that the QDs actually have optical properties peculiar to zero-dimensional confinement. Several experimental results indicating excellent growth controllability of the QDs are presented. Finally, recent challenges to apply the QDs to electronic memory devices are reported. Two kinds of devices, where the position of individual QD is artificially controlled, are proposed for the first time and the preliminary experimental results are explained. |
| Databáze: | OpenAIRE |
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