The effect of La2O3-incorporation in HfO2 dielectrics on Ge substrate by atomic layer deposition
| Autor: | Clement Lansalot-Matras, Jusang Park, Schubert S. Chu, David Thompson, Wontae Noh, Atif Noori, Jae Seung Lee, Min Kyu Kim, Chang Wan Lee, Il Kwon Oh, Wan-Joo Maeng, Hyungjun Kim |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
Annealing (metallurgy) Doping Analytical chemistry General Physics and Astronomy chemistry.chemical_element Surfaces and Interfaces General Chemistry Substrate (electronics) Dielectric Condensed Matter Physics Electron spectroscopy Surfaces Coatings and Films Hafnium Atomic layer deposition X-ray photoelectron spectroscopy chemistry |
| Zdroj: | Applied Surface Science. 287:349-354 |
| ISSN: | 0169-4332 |
| Popis: | We compared the electrical properties of HfO 2 , HfO 2 /La 2 O 3 , and La-doped HfO 2 gate insulators deposited on Ge substrate using an atomic layer deposition (ALD) process. TDMAH [tetrakis(dimethylamino)hafnium] and La(iprCp) 3 [tris(isopropyl-cyclopentadienyl) lanthanum] were employed as Hf and La precursors, respectively. Chemical compositions and binding structures were analyzed by X-ray photoelectron spectroscopy (XPS). Electrical properties were evaluated by capacitance–voltage (C–V) and current–voltage (I–V) measurements. We found that incorporation of La 2 O 3 near Ge can enhance the electrical properties of Ge MOS capacitors. The best electrical properties of 50 mV of hysteresis and mid ∼10 12 cm −2 eV −1 range interface states were found for the 400 °C-annealed HfO 2 /La 2 O 3 bilayer sample. These values are significantly better than those of ALD HfO 2 gate insulators on Ge. We attribute this to the formation of LaGeO x layers on the Ge surface, which reduces Ge O bonding. |
| Databáze: | OpenAIRE |
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