| Autor: |
S. Cassette, B. Dessertenne, S. Augaudy, Sylvain Delage, M.A. di Forte-Poisson, Jean-Pierre Teyssier, Raymond Quéré |
| Rok vydání: |
2002 |
| Předmět: |
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| Zdroj: |
2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157). |
| DOI: |
10.1109/mwsym.2001.966922 |
| Popis: |
An experimental characterization of GaN FETs is given in this paper. A pulsed I-V/pulsed S-parameters measurement set-up is used to investigate the trapping and thermal behavior of GaN MESFETs. It is shown that electrical performances are strongly affected by surface and substrate traps and that those effects are closely linked to the temperature of the device. RF measurements up to a drain voltage of 100 V and a temperature of 320/spl deg/C are presented. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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