650-mW single lateral mode power from tapered and flared buried ridge laser
| Autor: | M.S. Zediker, A.E. Huber, C.Y. Woo, R.B. Swint, T.S. Yeoh, James J. Coleman, Brian O. Faircloth |
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| Rok vydání: | 2002 |
| Předmět: |
Materials science
business.industry Physics::Optics Injection seeder Laser Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Optics Selective area epitaxy law Ridge (meteorology) Optoelectronics Metalorganic vapour phase epitaxy Electrical and Electronic Engineering business Waveguide Quantum well Diode |
| Zdroj: | IEEE Photonics Technology Letters. 14:1237-1239 |
| ISSN: | 1941-0174 1041-1135 |
| DOI: | 10.1109/lpt.2002.801072 |
| Popis: | Very high single lateral mode output powers of 650 mW are obtained from a diode laser with a unique waveguide design. The waveguide flares in the lateral dimension to create a larger spot size on the facet and simultaneously tapers in the transverse dimension to inhibit propagation of higher order lateral modes. These GaAs buried ridge devices are fabricated by selective area epitaxy. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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