Endpoint Detection in Plasma Etching Using Principal Component Analysis and Support Vector Machine
Autor: | Seung-Soo Han, Sang-Jeen Hong, Yi-Seul Han, Young-Kook Park |
---|---|
Rok vydání: | 2012 |
Předmět: | |
Zdroj: | ECS Transactions. 44:1075-1080 |
ISSN: | 1938-6737 1938-5862 |
DOI: | 10.1149/1.3694431 |
Popis: | Since semiconductor devices are extremely integrated, process control is much more difficult in semiconductor fabrication. The optical emission spectroscopy (OES) acquires unique wavelength intensity of particles in plasma chamber, and the endpoint can be decided by utilizing its intensity. However, the endpoint detection is difficult because not only of these tremendous amount of data, but also of extremely large amount of noise in OES data. To solve these problems, the OES data of by-products and the data of etchants are classified by SNR. And a combination of Principal Component Analysis (PCA) and Support Vector Machine (SVM) hybrid algorithm is applied to detect endpoint. The PCA was utilized to reduce dimension of the selected data, and SVM algorithm is applied to separates status between before endpoint and after endpoint. The SVM model using SNR and PCA showed excellent performance in real-time endpoint detection in plasma etching. |
Databáze: | OpenAIRE |
Externí odkaz: |