Two-dimensional hydrogen distribution on solid surfaces studied by electron-stimulated desorption microscopy and Ni-silicides on H-terminated Si(100) surfaces
| Autor: | Ken'ichi Ishikawa, Masamichi Yoshimura, Kazuyuki Ueda |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
Hydrogen
Chemistry Dangling bond Analytical chemistry General Physics and Astronomy chemistry.chemical_element Surfaces and Interfaces General Chemistry Substrate (electronics) Condensed Matter Physics Epitaxy Surfaces Coatings and Films law.invention chemistry.chemical_compound law Desorption Silicide Scanning tunneling microscope Hydrogen analyzer |
| Zdroj: | Applied Surface Science. :201-209 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/s0169-4332(00)00072-6 |
| Popis: | Hydrogen termination of silicon dangling bonds is a useful method in large-scale integrated circuit (LSI) technology. In the present study, a two-dimensional (2D) hydrogen analyzer has been developed using an electron-stimulated desorption (ESD) method. A result of 2D hydrogen analysis revealed a spatial resolution of 700 nm under the optimal condition. Hydrogen termination has been applied to heteroepitaxial growth of a Ni-silicide system on the H-terminated Si(100) surface using a scanning tunneling microscope (STM). The H-terminated surface formed a sharp interface between the silicide and the substrate. |
| Databáze: | OpenAIRE |
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