P.22: Improving Switching Characteristics of Amorphous-InGaZnO4Thin-Film Transistors by Dual-Gate Driving
| Autor: | Di Geng, Gregory N. Heiler, Ravi K. Mruthyunjaya, Manju Seok, Dong Han Kang, Mallory Mativenga, Timothy J. Tredwell, Jae Gwang Um, Jin Jang |
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| Rok vydání: | 2013 |
| Předmět: |
Engineering
business.industry Transistor Electrical engineering Hardware_PERFORMANCEANDRELIABILITY Dual gate law.invention Amorphous solid Semiconductor law Thin-film transistor Hardware_INTEGRATEDCIRCUITS Optoelectronics Double gate Hardware_ARITHMETICANDLOGICSTRUCTURES business Drain current Hardware_LOGICDESIGN |
| Zdroj: | SID Symposium Digest of Technical Papers. 44:1062-1065 |
| ISSN: | 0097-966X |
| DOI: | 10.1002/j.2168-0159.2013.tb06407.x |
| Popis: | When the top-gate and bottom-gate of a dual-gate amorphous-InGaZnO4 (a-IGZO) thin-film transistor (TFT) are electrically tied together (dual-gate driving), drain current (IDS) increases fivefold compared to single-gate driving (i.e. when driving with either bottom-gate or top-gate), resulting in significant enhancement of the driving ability of TFTs for active-matrix display (AMD) applications. The increase in IDS is attributed to better gate drive, achieved through the formation of two parallel channels; one at the top surface and the other at the bottom surface of the semiconductor. |
| Databáze: | OpenAIRE |
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