Characterization of C-Ti multilayer thin films obtained by TVA technology

Autor: Rodica Vladoiu, Radu Manu, Gabriel Prodan, Eugeniu Vasile, Virginia Dinca, Alin Velea, Cristian P. Lungu, V. Ciupina, Corneliu Porosnicu, Ovidius Cupsa, Madalina Prodan, Virginia Nicolescu
Rok vydání: 2020
Předmět:
Zdroj: Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVII.
Popis: Carbon-Titanium multilayer thin films were obtained by Thermionic Vacuum Arc (TVA) method. The nanostructured films consisting by 100nm Carbon base layer and seven 40nm alternatively Titanium and Carbon layers were deposed on Silicon substrate. As well, to give C-Ti multilayer films with different percentages in Ti and C of layers, a 100nm thick Carbon base layer was deposed on Si substrate, and then seven Ti-C layers, each of these having thickness of 40nm. In order to achieve the successively layers with C, and Ti different percentages, were adjusted the discharge parameters of C and Ti plasma sources to obtain the desired composition of layers. Also, were obtained composite films having a variable C: Ti atomic ratio 9:1 at interface to 1:9 at the surface. By changing of substrate temperature from room temperature to 100°C, 200°C, 300°C, 400°C respectively, and on the other hand the bias potential up to –700V, different batches of samples were obtained. Characterization of structural properties of films was achieved by Electron Microscopy technique (TEM, STEM) and GIXRD techniques. The measurements show that increase of the substrate temperature reveal changes in TixCy lattice parameters. Thus, according to GIXRD analysis it was found out that the Ti:C atomic ratio changes with increase of synthesis temperature. Also, in the case of composite films an increase of amount and sizes of TiC nanocrystals with the increase of energy of Ti ions determined by increase of bias voltage was observed. The tribological measurements were performed using a ball-on-disk system with normal forces of 0.5, 1, 2, 3N respectively. Was found that the coefficient of friction depends on the synthesis temperature and on the bias voltage. It is also noted that the friction coefficient depends on the pure C content, Ti content and amount of TiC nanocrystallites. These results are due to atomic diffusion at Ti/C interfaces and also are associated with amount of TiC nanocrystallites. To characterize the electrical conductive properties, the electrical surface resistance versus temperature have been measured, and then the electrical conductivity is calculated. Using the Wiedemann-Frantz law was obtained the thermal conductivity.
Databáze: OpenAIRE