AlInAs/GaInAs on InP HEMT low noise MMIC amplifiers

Autor:	M.A. Thompson, U.K. Mishra, S.E. Rosenbaum, K. Litvin, L.D. Nguyen, Lawrence E. Larson, J. A. Henige, C. Ngo, C.S. Chou, M. Lui, D.A. Pierson
Rok vydání:	2002
Předmět:	Materials science business.industry Amplifier Electrical engineering High-electron-mobility transistor Noise figure Low noise Gallium arsenide chemistry.chemical_compound chemistry Return loss Mmic amplifiers business Monolithic microwave integrated circuit
Zdroj:	1991 IEEE MTT-S International Microwave Symposium Digest.
DOI:	10.1109/mwsym.1991.147131
Popis:	AlInAs/GaInAs on InP HEMT (high electron mobility transistor) single-stage low-noise MMIC (monolithic microwave integrated circuit) amplifiers have been developed for operation at 12 GHz, 35 GHz and 60 GHz. A noise figure of 0.78 dB with an associated gain of 15 dB was achieved at 12 GHz. This is the lowest noise figure yet reported for a monolithic amplifier at 12 GHz. A noise figure of 1.2 dB with gain greater than 12 dB was obtained from 10 to 14 GHz. At 35.5 GHz, 13 dB gain with 17 dB input return loss was obtained. At 55 GHz, 8 dB gain with more than 12 dB input return loss was obtained. >
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e4e0d677a8e07c951d1f8745c6590ab4 https://doi.org/10.1109/mwsym.1991.147131 Zobrazit plný text záznamu