| Autor: |
M.C. Chen, T.L. Polgreen, M.W. Goodwin |
| Rok vydání: |
1988 |
| Předmět: |
|
| Zdroj: |
Journal of Crystal Growth. 86:484-489 |
| ISSN: |
0022-0248 |
| DOI: |
10.1016/0022-0248(90)90763-b |
| Popis: |
Deep levels in both bulk and LPE (liquid phase epitaxy) n-type Hg 0.685 Cd 0.315 Te have been studied by deep level transient spectroscopy (DLTS) between 78 and 170 K using metal-insulator-semiconductor (MIS) capacitors. One major acceptor-like electron trap was observed in the depletion region of the semiconductor with an energy level at E c -85 meV, or E c -0.3 E g . The electron capture cross section was found to be independent of the temperature and has an average value of 1X10 -16 cm 2 . The ratio of the trap concentration ( N t ) to the shallow donor concentration ( N d ) in both the bulk material and the LPE film was found to be close to 1. A general expression allowing numerical calculation of the capacitance transient due to the thermal ionization of traps in MIS capacitors with any value of N t / N d is also given. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
