Nonvolatile tuning of the Rashba effect in the CuInP2S6/MoSSe/CuInP2S6 heterostructure
| Autor: | Jia-Yong Zhang, Hong-Fei Huang, Xiang Hao, Yaojun Dong, Han Gu, Yin-Zhong Wu, Yang Yao |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Condensed matter physics Spintronics Band gap General Physics and Astronomy Heterojunction 02 engineering and technology 021001 nanoscience & nanotechnology Polarization (waves) 01 natural sciences Ferroelectricity symbols.namesake 0103 physical sciences Monolayer symbols van der Waals force 0210 nano-technology Rashba effect |
| Zdroj: | Journal of Applied Physics. 128:224105 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/5.0034047 |
| Popis: | The van der Waals sandwich heterostructure CuInP 2 S 6 / MoSSe / CuInP 2 S 6 (CIPS/MoSSe/CIPS) has first been employed as a prototype to tune the Rashba effect. By nonvolatile controlling of the orientation of the polarization of the top ferroelectric CIPS monolayer, it is confirmed that the Rashba effect can be switched on or off at the top position of the valence band (VB) around the Γ point. More significantly, we find that the Rashba coefficient increases by almost one order of magnitude for the “on” state as compared with the freestanding MoSSe monolayer. Based on the results of first-principle calculations, it is obtained that the enhancement of the Rashba effect results from the charge transfer from the top CIPS layer to the MoSSe layer or the bottom CIPS layer, and the lifting of the d-orbit band of the light Cu atom leads to the disappearance of Rashba spin splitting at the top of the VB around the Γ point. Furthermore, the polarization orientation of the bottom CIPS layer can greatly alter the bandgap of the sandwich structure. We hope the above nonvolatile and large amplitude tuning of the Rashba effect should be useful in the design of spintronic nano-devices. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|