Excitation mechanisms of electro- and photo-luminescence of Er3+ in Er-implanted Si

Autor:	K. Shimadzu, Shin-ichiro Uekusa, Mikito Kumagai, K. Awahara
Rok vydání:	1997
Předmět:	Nuclear and High Energy Physics Materials science business.industry Exciton Electroluminescence Signal Reverse bias Optoelectronics business Luminescence Instrumentation Recombination Excitation Diode
Zdroj:	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :537-540
ISSN:	0168-583X
DOI:	10.1016/s0168-583x(96)00987-1
Popis:	Er-implanted p+-n Si diode was fabricated and characterized by photo- (PL) and electroluminescence (EL) measurements. A weak EL from Er3+ was observed at 1538 nm together with the strong free exciton (FE) emissions at 1090 nm and 1130 nm under forward bias, whereas the noisy FE emissions were detected and no noticeable Els from Er3+ were identified under reverse bias. On the other hands, in PL measurements, a sharp PL signal from Er3+ was clearly observed at 1538 nm, its PL spectral feature being similar to that of EL from Er3+ under forward bias. Our present results suggest that the excitation of Er3+ is achieved through the recombination of electron-hole pairs generated in Si under forward bias.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e4dedb1bcee78f7dce00e4d6aa4c4aa0 https://doi.org/10.1016/s0168-583x(96)00987-1 Zobrazit plný text záznamu Full Text from ScienceDirect