Influence of miscut angle of Si(111) substrates on the performance of InGaN LEDs
| Autor: | Zhi-Yong Cui, Li Wang, Fu-Sheng Huang, Qin Wu, Wen Liu, Wang Xiaolan, Fengyi Jiang, Jianli Zhang, Qinghua Mao |
|---|---|
| Rok vydání: | 2013 |
| Předmět: |
Materials science
business.industry General Engineering General Physics and Astronomy chemistry.chemical_element Substrate (electronics) Blueshift law.invention Wavelength chemistry law Optoelectronics business Luminous efficacy Science technology and society Quantum well Indium Light-emitting diode |
| Zdroj: | Applied Physics Express. 7:012102 |
| ISSN: | 1882-0786 1882-0778 |
| Popis: | As the angle of the miscut of a Si(111) substrate increases, the luminous efficiency of InGaN LEDs decreases dramatically, along with a considerable blue shift of emission wavelength. The blue shift of the wavelength and the decrease in the efficiency are found to originate from the reduced indium incorporation and the poor uniformity of the quantum wells. The origin of the nonuniform indium incorporation of the samples is attributed to the surface morphologies formed by step bunching, as confirmed by atomic force microscopy measurements. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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