The electronic conduction mechanism in magnesium-doped Ba0.4Sr0.6TiO3 thin films for varactor application

Autor:	J. He, W. Shu, G.J. Dong, Z.H. Sun, Y.G. Xiao, J. W. Hou, H.Y. Xu, W.F. Zhao, Jihua Zhang, M.H. Tang, Yu Zhou, Feng Yang
Rok vydání:	2009
Předmět:	Materials science Dopant Electrical resistivity and conductivity Annealing (metallurgy) Schottky effect Doping Materials Chemistry Analytical chemistry General Chemistry Thin film Condensed Matter Physics Ferroelectricity Leakage (electronics)
Zdroj:	Solid State Communications. 149:806-809
ISSN:	0038-1098
DOI:	10.1016/j.ssc.2009.02.038
Popis:	Sol–gel derived magnesium-doped ferroelectric Ba0.4Sr0.6TiO3 (with Mg dopant to be 5 mol%, 10 mol%, and 15 mol% ) (BSMT) thin films are deposited on Pt(111)/Ti/SiO2/Si(100) substrate and annealed at 650 ∘C, 700 ∘C, and 750 ∘C, respectively. In the low field ( e reveal the experiment results agree well with the Schottky-limited current model for low voltage. At higher voltage, the space-charge-limited conduction (SCLC) mechanism was also shown. In conclusion, Schottky-limited current mechanism and SCLC are given for the electrical conduction leakage behavior in the Mg-doped BST thin film.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e4c625778fa0a4633ed78b20e1215c09 https://doi.org/10.1016/j.ssc.2009.02.038 Zobrazit plný text záznamu Full Text from ScienceDirect