Analysis of anisotropic ionization coefficient in bulk 4H-SiC with full-band Monte Carlo simulation
| Autor: | Yoshinari Kamakura, Y. Ueoka, K. Konaga, T. Kotani, R. Fujita, Nobuya Mori |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Physics Monte Carlo method Ionization coefficient Full band 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Electron transport chain Computational physics Electric field 0103 physical sciences Statistical physics 0210 nano-technology Anisotropy |
| Zdroj: | 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). |
| DOI: | 10.23919/sispad.2017.8085321 |
| Popis: | High-field electron transport characteristics in bulk 4H-SiC are simulated with the full-band Monte Carlo method, and anisotropy of the ionization coefficient α is discussed. The simulation results exhibit larger α along 〈1120〉 direction than 〈0001〉 direction, which is consistent with the experimental observation. Furthermore, the dependence of α on the electric field direction θ is investigated. Compared to the existing analytical model, the present simulation results show a steeper increase when θ is tilted from the c-axis, which is originated from the anisotropic nature of the hot-electron heating. |
| Databáze: | OpenAIRE |
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