Temperature-dependent degradation mechanisms of threshold voltage in La2O3-gated n-channel metal-oxide-semiconductor field-effect transistors

Autor:	De-Cheng Hsu, Joseph Ya-min Lee, Ying-Lang Wang, Ming-Tsong Wang, Pi-Chun Juan
Rok vydání:	2010
Předmět:	Materials science Negative-bias temperature instability Gate oxide Gate dielectric MOSFET Analytical chemistry General Physics and Astronomy Field-effect transistor Subthreshold slope Threshold voltage Leakage (electronics)
Zdroj:	Journal of Applied Physics. 108:064111
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.3482057
Popis:	Metal-oxide-semiconductor capacitors and n-channel metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric were fabricated. The positive bias temperature instability was studied. The degradation of threshold voltage (ΔVT) showed an exponential dependence on the stress time in the temperature range from 25 to 75 °C. The degradation of subthreshold slope (ΔS) and gate leakage (IG) with stress voltage was also measured. The degradation of VT is attributed to the oxide trap charges Qot. The extracted activation energy of 0.2 eV is related to a degradation dominated by the release of atomic hydrogen in La2O3 thin films.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e49a5cc6cef4496747ada4e669d755c7 https://doi.org/10.1063/1.3482057 Zobrazit plný text záznamu