Transistors based on proximity effect control of the critical current of a superconductor
| Autor: | Alan Willis Kleinsasser |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
Materials science
Condensed matter physics business.industry Transistor Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention Coherence length Semiconductor law Condensed Matter::Superconductivity Proximity effect (superconductivity) Optoelectronics Field-effect transistor Electrical and Electronic Engineering business p–n junction Current density Voltage |
| Zdroj: | IEEE Transactions on Applied Superconductivity. 3:1968-1971 |
| ISSN: | 1558-2515 1051-8223 |
| DOI: | 10.1109/77.233573 |
| Popis: | The critical current of a bilayer consisting of a thin superconductor in contact with a normal conductor depends on the thickness of the normal layer due to the proximity effect. Using one electrode of a semiconductor pn junction as the normal material, it is possible to vary the normal layer thickness by applying a voltage to the pn junction. The author discusses the feasibility of transistors based on such structures. He concludes that there is no fundamental impediment to operating a transistor based on proximity effect control of a superconductor. However, the proposed device requires that both superconductor and semiconductor layers be no thicker than roughly a coherence length. The large mismatch at the superconductor-semiconductor interface reduces the size of the proximity effect, possibly making the desired effect too small to be useful. It is difficult to construct a nonlatching device, or one with voltage gain. Thus, the proposed device has major drawbacks which prevent it from being considered as more than a scientific curiosity. > |
| Databáze: | OpenAIRE |
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