IMPROVED HYDROGEN DETECTION OF ISLAND TYPE PALLADIUM FILM — NANOPOROUS SILICON DIODE AT ROOM TEMPERATURE

Autor:	A.I. Manilov, R. V. Skryshevsky, Valeriy A. Skryshevsky, V. Polischuk, I. V. Gavrilchenko
Rok vydání:	2014
Předmět:	Materials science Hydrogen chemistry Silicon Analytical chemistry chemistry.chemical_element Substrate (electronics) Porous silicon Layer (electronics) Hydrogen sensor Deposition (law) Diode
Zdroj:	Sensor Electronics and Microsystem Technologies. 5:28-38
ISSN:	2415-3508 1815-7459
DOI:	10.18524/1815-7459.2008.2.114425
Popis:	An island type palladium film — silicon diode hydrogen sensor has been developed applying thin (15-75 nm) nanoporous silicon as an intermediate sensitive layer. Using a thermal Pd deposition into porous silicon allows to vary the size and morphology of the metal islands in the porous silicon matrix. The gas sensor behaviour under hydrogen exposure in mixture of 200 ppm- 10% H2 and dry synthetic (20%O2 +80 %N2 ) air was investigated by measuring the I-V characteristics. The diode current and sensor hydrogen sensitivity is shown to depend on the type of silicon substrate and the thickness of porous silicon. The current change versus hydrogen concentrations shows the linear law both for large and small hydrogen concentrations. At room temperature the sensor sensitivity is approximately 1 μA/100ppm, the response and recovery times lies in 1-8 min range.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e4829ef8f0d236681152e33183bce2c9 https://doi.org/10.18524/1815-7459.2008.2.114425 Zobrazit plný text záznamu