Crystallization behavior of Ge1Cu2Te3 amorphous film

Autor:	Yuji Sutou, Yuta Saito, Masashi Sumiya, Toshiya Kamada, Junichi Koike
Rok vydání:	2010
Předmět:	Materials science Chalcopyrite Drop (liquid) Activation energy Phase-change material law.invention Amorphous solid Chemical engineering Electrical resistance and conductance law Phase (matter) visual_art visual_art.visual_art_medium Crystallization
Zdroj:	MRS Proceedings. 1251
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-1251-h05-08
Popis:	The electrical resistance on the crystallization process of sputtered-deposited Ge1Cu2Te3 film was investigated by two-point probe method. It was found that the amorphous Ge1Cu2Te3 film crystallizes into a single Ge1Cu2Te3 phase with a chalcopyrite structure, which leads to a large resistance drop. The crystallization temperature of the Ge1Cu2Te3 amorphous film was about 250 °C, which is about 70 °C higher than the conventional Ge2Sb2Te5 amorphous film. The activation energy for the crystallization of the Ge1Cu2Te3 amorphous film was higher than that of the Ge2Sb2Te5 amorphous film. The Ge1Cu2Te3 compound with a low melting point can be expected to be suitable as the phase change material for PCRAM.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e46f556ac7ad8285f3f35a12fdbdbb86 https://doi.org/10.1557/proc-1251-h05-08 Zobrazit plný text záznamu Full text from SpringerLink