Iron-Related Defect Centers in 4H-SiC Detected by Deep Level Transient Spectroscopy

Autor:	Heiko B. Weber, Michael Krieger, Gerhard Pensl, R. Hollweck, Bernd Zippelius, Svetlana Beljakowa, Lia Trapaidze
Rok vydání:	2011
Předmět:	Deep-level transient spectroscopy Materials science stomatognathic system Mechanics of Materials Mechanical Engineering General Materials Science Condensed Matter Physics Molecular physics
Zdroj:	Materials Science Forum. :257-260
ISSN:	1662-9752
DOI:	10.4028/www.scientific.net/msf.679-680.257
Popis:	Fe-implanted n-/p-type 4H-SiC samples were investigated by deep level transient spectroscopy (DLTS). In order to be able to separate Fe-related defect centers from defects caused by implantation damage, a corresponding Ar-profile was implanted. No Fe-related defects were observed in n-type 4H-SiC, while two Fe-related centers could be identified in p-type 4H-SiC. The electrical behavior of these centers is donor-like.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e46833e0f1f125211360d53e062c0f64 https://doi.org/10.4028/www.scientific.net/msf.679-680.257 Zobrazit plný text záznamu