Resonant tunneling of electrons through virtual interference states formed as a result of reflection from the boundary of strongly doped region of GaAs
| Autor: | Yu. N. Khanin, Yu. V. Dubrovskii, E. E. Vdovin |
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| Rok vydání: | 2004 |
| Předmět: |
Physics
congenital hereditary and neonatal diseases and abnormalities Condensed matter physics Solid-state physics Phonon Doping nutritional and metabolic diseases General Physics and Astronomy Heterojunction Electron Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter::Materials Science Reflection (mathematics) Electron scattering Quantum tunnelling |
| Zdroj: | Journal of Experimental and Theoretical Physics. 99:530-538 |
| ISSN: | 1090-6509 1063-7761 |
| DOI: | 10.1134/1.1809681 |
| Popis: | The paper is devoted to analysis of the electron transport through one-barrier GaAs/AlAs/GaAs heterostructures. The oscillating component of transport characteristics of symmetric one-barrier GaAs/AlAs/GaAs heterostructures with spacers, which is associated with resonance tunneling of electrons via virtual states formed in the spacer region of the structures due to reflection of electrons from the n −-GaAs/n +-GaAs interface and their subsequent interference. It is shown that electrons are predominantly reflected coherently from the boundary of the strongly doped region as in the case of one-dimensional averaged potential of randomly arranged (beginning from this boundary) impurities. It is shown that low-energy virtual resonances are suppressed due to electron scattering as a result of their interaction with longitudinal optical (LO) phonons in the spacer region. |
| Databáze: | OpenAIRE |
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