Co3O4 thin films prepared by hollow cathode discharge
| Autor: | Jiří Šmíd, Karel Jurek, Štěpán Kment, Martin Cada, Michaela Dvořáková, Jiří Rathouský, M. Kohout, Roman Perekrestov, Zdeněk Hubička, J. Olejníček, Petra Kšírová |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
02 engineering and technology Surfaces and Interfaces General Chemistry Sputter deposition 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Cathode 0104 chemical sciences Surfaces Coatings and Films law.invention symbols.namesake Van der Pauw method law Sputtering Specific surface area Materials Chemistry symbols Composite material High-power impulse magnetron sputtering Thin film 0210 nano-technology Raman spectroscopy |
| Zdroj: | Surface and Coatings Technology. 366:303-310 |
| ISSN: | 0257-8972 |
| Popis: | Semiconducting crystalline Co3O4 thin films were deposited on glass, stainless steel and Si substrates using three different PVD methods: (i) RF magnetron sputtering, (ii) high-power impulse magnetron sputtering (HiPIMS), and (iii) hollow cathode discharge (HCD). All layers were sputtered from pure cobalt target (or nozzle) in reactive atmosphere and post-annealed on air. Properties of deposited layers have been studied and discussed with respect to their potential applications. The surface morphology of the films was analyzed by SEM, their crystalline structure by XRD and Raman spectroscopy, chemical composition by EDS, electrical properties by Van der Pauw method and the specific surface area was measured by standard BET analysis. The layers prepared by the hollow cathode discharge compared to the magnetron-prepared films exhibited higher porosity, higher resistivity, higher activation energy, and higher deposition rate during the sputtering process. |
| Databáze: | OpenAIRE |
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