EUV defect reduction activities using coater/developer and etching technique

Autor:	Shota Yoshimura, Yannick Feurprier, Yoshihide Kihara, Arnaud Dauendorffer, Tetsuya Nishizuka, Noriaki Nagamine, Kenta Ono, Takahiro Shiozawa, Shinya Morikita, Keisuke Yoshida, Kathleen Nafus, Atsutoshi Inokuchi, Satoru Shimura, Kiyoshi Maeda, Ken Kobayashi
Rok vydání:	2021
Předmět:	Materials science business.industry Extreme ultraviolet lithography Oxide Reduction (complexity) chemistry.chemical_compound chemistry Resist Etching (microfabrication) Extreme ultraviolet Optoelectronics Process window business Lithography
Zdroj:	Advances in Patterning Materials and Processes XXXVIII.
Popis:	Extreme ultraviolet (EUV) lithography faces major challenges for smaller nodes due to the impact of stochastic and processing failures.1 One of the main challenges for pitch shrink at these nodes is the optimization of the trade-off between break type defects versus bridge type defects as the process window between these defect modes gets smaller.2 In this paper, we examine EUV defect reduction techniques for Chemically Amplified Resist (CAR) and Metal Oxide Resist (MOR) via coater/developer process development combined with optimized etching processes.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e4483d854536a268b1f80160886a5e34 https://doi.org/10.1117/12.2583772 Zobrazit plný text záznamu