Molecular beam epitaxy grown long wavelength infrared HgCdTe on Si detector performance
| Autor: | G. Brill, Yuanping Chen, M. Carmody, Nibir K. Dhar, Jose M. Arias, John H. Dinan, M. Groenert, J. G. Pasko, D. D. Edwall, Jagmohan Bajaj, Andrew J. Stoltz, Scott A. Cabelli, L. A. Almeida, Robert B. Bailey |
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| Rok vydání: | 2005 |
| Předmět: |
Materials science
Silicon business.industry Detector chemistry.chemical_element Substrate (electronics) Condensed Matter Physics Epitaxy Cadmium telluride photovoltaics Electronic Optical and Magnetic Materials chemistry Materials Chemistry Optoelectronics Infrared detector Electrical and Electronic Engineering business Diode Molecular beam epitaxy |
| Zdroj: | Journal of Electronic Materials. 34:832-838 |
| ISSN: | 1543-186X 0361-5235 |
| Popis: | The use of silicon as a substrate alternative to bulk CdZnTe for epitaxial growth of HgCdTe for infrared (IR) detector applications is attractive because of potential cost savings as a result of the large available sizes and the relatively low cost of silicon substrates. However, the potential benefits of silicon as a substrate have been difficult to realize because of the technical challenges of growing low defect density HgCdTe on silicon where the lattice mismatch is ∼19%. This is especially true for LWIR HgCdTe detectors where the performance can be limited by the high (∼5×106 cm−2) dislocation density typically found in HgCdTe grown on silicon. We have fabricated a series of long wavelength infrared (LWIR) HgCdTe diodes and several LWIR focal plane arrays (FPAs) with HgCdTe grown on silicon substrates using MBE grown CdTe and CdSeTe buffer layers. The detector arrays were fabricated using Rockwell Scientific’s planar diode architecture. The diode and FPA and results at 78 K will be discussed in terms of the high dislocation density (∼5×106 cm2) typically measured when HgCdTe is grown on silicon substrates. |
| Databáze: | OpenAIRE |
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