Autor: D. R. S. Somayajulu, S. N. Chintalapudi, K. C. Sebastian, G. Pal
Rok vydání: 1999
Předmět:
Zdroj: Hyperfine Interactions. :409-413
DOI: 10.1023/a:1017085103802
Popis: The EFG in IV–VI compound semiconductor SnSe was studied using two hyperfine interaction techniques, namely, TDPAC and Mossbauer spectroscopy. The EFG in this material increases sharply up to 300 K and thereafter at higher temperatures it gets saturated. However, the conductivity increases steadily at all the temperatures. The conductivity curve has two slopes. The first portion is due to the population of shallow Cd acceptor levels. Thus, in SnSe also the variation of the EFG with temperature is complex, as in other medium-gap semiconductors.
Databáze: OpenAIRE