Density of States and Interband Light Absorption in β-Ga2O3 Thin Films

Autor:	O.M. Bordun, I. I. Medvid, B. O. Bordun, I. Yo. Kukharskyy
Rok vydání:	2021
Předmět:	Materials science Condensed matter physics business.industry Doping Radius Condensed Matter Physics Condensed Matter::Materials Science Semiconductor Sputtering Absorption band Density of states Thin film Absorption (electromagnetic radiation) business Spectroscopy
Zdroj:	Journal of Applied Spectroscopy. 88:257-260
ISSN:	1573-8647 0021-9037
DOI:	10.1007/s10812-021-01166-8
Popis:	The long-wavelength edge of the fundamental absorption band of β-Ga2O3 thin films obtained by radio-frequency ion-plasma sputtering is studied. The edge of interband absorption during annealing of the films in oxygen, argon, and hydrogen is shown to be approximated well by the Urbach empirical rule. A model of a heavily doped or defective semiconductor in the quasi-classical approximation was used to analyze the experimental results. This model could be used to determine the radius of the basic electronic state a, the shielding radius rS, and the rootmean-square potential Δ.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e436cfdaf301d67a037d1f9047e2ec08 https://doi.org/10.1007/s10812-021-01166-8 Zobrazit plný text záznamu Plný text ve formátu PDF