Highly phosphorus-doped polysilicon films with low tensile stress for surface micromachining using POCl3 diffusion doping
| Autor: | L. Elbrecht, Josef Binder, R. Catanescu, J. Zacheja |
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| Rok vydání: | 1997 |
| Předmět: |
Materials science
Dopant business.industry Annealing (metallurgy) Polysilicon depletion effect Doping Metals and Alloys Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Stress (mechanics) Surface micromachining Residual stress Electronic engineering Microelectronics Electrical and Electronic Engineering Composite material business Instrumentation |
| Zdroj: | Sensors and Actuators A: Physical. 61:374-378 |
| ISSN: | 0924-4247 |
| DOI: | 10.1016/s0924-4247(97)80292-0 |
| Popis: | Stress in highly phosphorus-doped polysilicon films for surface micromachining using diffusion doping with POCl3 as dopant source is investigated. The deposition temperature is varied in the range 565 to 620°C, and doping is done at 950 and 850°C, respectively. Wafer curvature measurements and micromachined indicator structures are used to determine the residual stress. A process sequence yielding highly phosphorus-doped polysilicon films with low tensile stress is presented. As no additional high-temperature annealing step is necessary, the films are suitable for integrating surface-micromachined sensors and actuators with microelectronics. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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