Factors affecting the interconnection resistance and yield in multilayer polyimide/copper structures
| Autor: | W. Graham, Eileen A. Galligan, Sharon L. Nunes, C.-A. Chang, D.-Y. Shih, Janusz S. Wilczynski, John J. Ritsko, J. Lewis, Chandrasekhar Narayan, Laura Beth Rothman, J. Cataldo, Richard P Mcgouey, Helen Li Yeh, Alina Deutsch, Jurij R. Paraszczak, Eric D. Perfecto, Russell J. Serino |
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| Rok vydání: | 1993 |
| Předmět: |
Interconnection
Yield (engineering) Materials science Passivation Silicon General Engineering chemistry.chemical_element Substrate (electronics) Industrial and Manufacturing Engineering Electronic Optical and Magnetic Materials chemistry Electronic engineering Electrical and Electronic Engineering Composite material Thin film Plasma processing Polyimide |
| Zdroj: | IEEE Transactions on Components, Hybrids, and Manufacturing Technology. 16:74-88 |
| ISSN: | 0148-6411 |
| Popis: | The use of a lift-off technique to fabricate a high-density structure consisting of multiple layers of metal/polyimide thin-film structures on a silicon substrate is described. To achieve better performance and high yield, the process design, the processing parameters, the thickness of the Cr/Cu/Cr metallurgy, and the use of suitable polyimide dielectrics, were evaluated. The plasma processing conditions, the types of passivation metals on Cu, and the use of a siloxane-polyimide as the gap-fill/etch-stop material were all shown to play a critical role in affecting the interconnection resistance and yield of the multilayer thin-film structures. By optimizing these parameters the feasibility of fabricating high-density thin-film wiring layers with good yield is demonstrated. > |
| Databáze: | OpenAIRE |
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