Optical characteristics of thin rf sputtered Ta2O5layers
| Autor: | Elena Atanassova, Tz. Babeva, J. Koprinarova |
|---|---|
| Rok vydání: | 2005 |
| Předmět: |
Materials science
Annealing (metallurgy) Band gap Analytical chemistry Surfaces and Interfaces Condensed Matter Physics Reflectivity Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Amorphous solid Capacitor law Materials Chemistry Transmittance Crystallite Electrical and Electronic Engineering Refractive index |
| Zdroj: | physica status solidi (a). 202:330-336 |
| ISSN: | 1862-6319 1862-6300 |
| Popis: | The optical properties of rf sputtered (30; 52 nm) Ta2O5 before and after O2 annealing at 1173 K have been investigated in the terms of storage capacitor applications for high density dynamic memories. Refractive index and thickness of the films are determined from transmittance and reflectance measurements at normal light incidence in the spectral range 400–800 nm. The film density explored by refractive index is improved with increasing film thickness as well as after annealing. The optical band gap is found to be 4.20 eV for 30 nm and 4.12 eV for 52 nm Ta2O5 regardless of the amorphous status of the layers-amorphous (as-deposited) or polycrystalline (annealed layers). (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
| Databáze: | OpenAIRE |
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