High pressure oxidation induced stress in submicron trench structures

Autor:	B. Acker, J. A. Mandelman, R. Stengl, J. Benedict, H.‐J. Timme
Rok vydání:	1996
Předmět:	Stress (mechanics) Materials science Nanostructure Induced stress Physics and Astronomy (miscellaneous) Silicon chemistry High pressure Trench chemistry.chemical_element Wafer Dyne Composite material
Zdroj:	Applied Physics Letters. 68:2843-2845
ISSN:	1077-3118 0003-6951
Popis:	The maximum stress induced by high pressure oxidation (wet and dry) in the vertical bird’s beak of submicron trench structures has been investigated experimentally. The oxidation induced stress was measured via wafer bow on wafers that were patterned with a special trench mask featuring a pattern factor of 50%. For wet high pressure oxidations above 850 °C, the stress drops from 2×1010 dyne/cm2 at 850 °C to a value below 1×109 dyne/cm2 at 1000 °C. At oxidation temperatures between 700 and 900 °C, dry pressure oxidations show lower stress than wet oxidations.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e408bbcd933b1dd1670d9c92325517d4 https://doi.org/10.1063/1.116343 Zobrazit plný text záznamu