Passivation of Crystalline Silicon Wafers by Ultrathin Oxide Layers: Comparison of Wet-chemical, Plasma and Thermal Oxidation Techniques
| Autor: | Daniel Vossing, Karim M. Gad, Martin Kasemann, Patrice Balamou, Bert Stegemann, Thomas Lussky, Heike Angermann |
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| Rok vydání: | 2018 |
| Předmět: |
Suboxide
Thermal oxidation Materials science Passivation Silicon Surface photovoltage Oxide chemistry.chemical_element 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences chemistry.chemical_compound X-ray photoelectron spectroscopy Chemical engineering chemistry Crystalline silicon 0210 nano-technology |
| Zdroj: | 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC). |
| DOI: | 10.1109/pvsc.2018.8548154 |
| Popis: | Ultrathin oxide layers on crystalline silicon (c-Si) were prepared by different wet-chemical, plasma- and thermal oxidation techniques. The resulting electronic and chemical SiO 2 /Si interface properties were analyzed, compared and evaluated by combined x-ray photoemission (XPS) and surface photovoltage (SPV) measurements. Depending on the oxidation technique, chemically abrupt SiO 2 /Si interfaces (suboxide amounts $ 2 /Si interfaces are able to generate low interface defect states densities. |
| Databáze: | OpenAIRE |
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